Package | TO-92-3 |
Transistor Polarity | N |
Maximum Drain Source Voltage | 500 V |
Maximum Continuous Drain Current | 380 mA |
Maximum Gate Source Voltage | ±30V |
Power Dissipation | 2 W |
Number of Elements per Chip | 1 |
Maximum Forward Voltage | 500VDC |
Output Power | 2W |
Peak Non-Repetitive Surge Current | 0.38A |
Maximum Reverse Current | 50uA |
Channel Mode | N-Channel Enhancement |
Peak Reverse Recovery Time | 188ns |
Channel Type | N |
Repetitive Peak Reverse Voltage | 500VDC |
Configuration | Single |
Maximum Drain Source Resistance | 6.0 Ohms@10V |
Category | Power MOSFET |
Maximum Forward Current | 0.38A |
Typical Fall Time | 15ns |
Typical Gate Charge @ Vgs | 6.4nC@10V |
Typical Input Capacitance @ Vds | 195pF@10V |
Typical Rise Time | 10ns |
Typical Turn-Off Delay Time | 20ns |
Typical Turn-On Delay Time | 10ns |
Minimum Operating Temperature | -55°C |
Maximum Operating Temperature | 150°C |
Mounting | Through Hole |
Packaging | Bulk |
Pins | 3 |
Family | FQN |
Width | 2.41mm |
Height | 4.01mm |
Product Length | 4.77mm |
Product Type | MOSFET |