| Package | TO-220-3 |
| Transistor Polarity | P |
| Maximum Drain Source Voltage | -200 V |
| Maximum Continuous Drain Current | -6.5 A |
| Maximum Gate Source Voltage | ±20V |
| Power Dissipation | 74 W |
| Number of Elements per Chip | 1 |
| Maximum Forward Voltage | -200VDC |
| Output Power | 74W |
| Peak Non-Repetitive Surge Current | -26A |
| Maximum Reverse Current | -500uA |
| Channel Mode | P-Channel Enhancement |
| Peak Reverse Recovery Time | 28ns |
| Channel Type | P |
| Repetitive Peak Reverse Voltage | -200VDC |
| Configuration | Single |
| Maximum Drain Source Resistance | 0.8 Ohms@10V |
| Category | Power MOSFET |
| Maximum Forward Current | -6.5A |
| Typical Fall Time | 24ns |
| Typical Gate Charge @ Vgs | 29nC @10V |
| Typical Input Capacitance @ Vds | 700pF@25V |
| Typical Rise Time | 27ns |
| Typical Turn-Off Delay Time | 28ns |
| Typical Turn-On Delay Time | 12ns |
| Minimum Operating Temperature | -55°C |
| Maximum Operating Temperature | 150°C |
| Mounting | Through Hole |
| Packaging | Bulk |
| Pins | 3 |
| Family | IRF |
| Width | 4.7mm |
| Height | 8.76mm |
| Product Length | 10.54mm |
| Product Type | MOSFET |