| Package | TO-220-3 |
| Transistor Polarity | N |
| Maximum Drain Source Voltage | 100 V |
| Maximum Continuous Drain Current | 12 A |
| Maximum Gate Source Voltage | ±10V |
| Power Dissipation | 60 W |
| Number of Elements per Chip | 1 |
| Maximum Forward Voltage | 100VDC |
| Output Power | 60W |
| Peak Non-Repetitive Surge Current | 30A |
| Maximum Reverse Current | 50uA |
| Channel Mode | N-Channel Enhancement |
| Peak Reverse Recovery Time | 150ns |
| Channel Type | N |
| Repetitive Peak Reverse Voltage | 100VDC |
| Configuration | Single |
| Maximum Drain Source Resistance | 0.2 Ohms@5V |
| Category | Power MOSFET |
| Maximum Forward Current | 12A |
| Typical Fall Time | 80ns |
| Typical Input Capacitance @ Vds | 900pF @25V |
| Typical Rise Time | 70ns |
| Typical Turn-Off Delay Time | 100ns |
| Typical Turn-On Delay Time | 15ns |
| Minimum Operating Temperature | -55°C |
| Maximum Operating Temperature | 150°C |
| Mounting | Through Hole |
| Packaging | Rail |
| Pins | 3 |
| Family | RFP12N10L |
| Width | 4.57mm |
| Height | 9.02mm |
| Product Length | 10.28mm |
| Product Type | MOSFET |