Package | TO-220-3 |
Transistor Polarity | P |
Maximum Drain Source Voltage | -55 V |
Maximum Continuous Drain Current | -31 A |
Maximum Gate Source Voltage | ±20V |
Power Dissipation | 110 W |
Number of Elements per Chip | 1 |
Maximum Forward Voltage | -55VDC |
Output Power | 110W |
Peak Non-Repetitive Surge Current | -110A |
Maximum Reverse Current | -250uA |
Channel Mode | P-Channel Enhancement |
Peak Reverse Recovery Time | 63ns |
Channel Type | P |
Repetitive Peak Reverse Voltage | -55VDC |
Configuration | Single |
Maximum Drain Source Resistance | 0.06 Ohms@10V |
Category | Power MOSFET |
Maximum Forward Current | -31A |
Typical Fall Time | 63ns |
Typical Gate Charge @ Vgs | 63nC @10V |
Typical Input Capacitance @ Vds | 1200pF@25V |
Typical Rise Time | 66ns |
Typical Turn-Off Delay Time | 39ns |
Typical Turn-On Delay Time | 14ns |
Minimum Operating Temperature | -55°C |
Maximum Operating Temperature | 175°C |
Mounting | Through Hole |
Packaging | Bulk |
Pins | 3 |
Family | IRF |
Width | 4.69mm |
Height | 8.77mm |
Product Length | 10.54mm |
Product Type | MOSFET |