Package | TO-220-3 |
Transistor Polarity | P |
Maximum Drain Source Voltage | -100 |
Maximum Continuous Drain Current | -6 A |
Maximum Gate Source Voltage | ±20V |
Power Dissipation | 60 W |
Number of Elements per Chip | 1 |
Maximum Forward Voltage | -100VDC |
Output Power | 40W |
Peak Non-Repetitive Surge Current | -24A |
Maximum Reverse Current | -25uA |
Channel Mode | P-Channel Enhancement |
Peak Reverse Recovery Time | 100ns |
Channel Type | P |
Repetitive Peak Reverse Voltage | -100VDC |
Configuration | Single |
Maximum Drain Source Resistance | 0.6 Ohms@10V |
Category | Power MOSFET |
Maximum Forward Current | -6A |
Typical Fall Time | 25ns |
Typical Gate Charge @ Vgs | 18nC @10V |
Typical Input Capacitance @ Vds | 390pF@25V |
Typical Rise Time | 29ns |
Typical Turn-Off Delay Time | 21ns |
Typical Turn-On Delay Time | 9.6ns |
Minimum Operating Temperature | -55°C |
Maximum Operating Temperature | 175°C |
Mounting | Through Hole |
Packaging | Bulk |
Pins | 3 |
Family | IRF9520 |
Width | 4.7mm |
Height | 8.76mm |
Product Length | 10.54mm |
Product Type | MOSFET |