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TC58BYG2S0HBAI6,Memory,IC FLASH 4G PARALLEL 67VFBGA
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TC58BYG2S0HBAI6
IC FLASH 4G PARALLEL 67VFBGA
Availability
Product Details
SN Part Number: TC58BYG2S0HBAI6
Model Part Number: TC58BYG2S0HBAI6
Product Category: Memory
Toshiba Memory America, Inc.
Standard
188 In Stock
Additional Stock Lead Time: 24 Wks
Quantity
Tech Specifications
Description
Product Attribute
PackagingTray
SeriesBenand™
Part StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND (SLC)
Memory Size4Gb (512M x 8)
Clock Frequency-
Write Cycle Time - Word, Page25ns
Access Time25ns
Memory InterfaceParallel
Voltage - Supply1.7 V ~ 1.95 V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case67-VFBGA
Supplier Device Package67-VFBGA (6.5x8)
Other Information
Packing
Minimum packaging
Minimum order quantity
1
Documents
Datasheet
SHIPPING & PAYMENT
PACKING
GUARANTEES
SHIPPINGPROCESSING TIME:SHIPPING FEE DEPEND ON DIFFERENT ZONE AND COUNTRY.
Shipping Type
Shipping Fee
LeadTime
$20.00-$40.00 (0.50 KG)3-7 days
$25.00-$45.00 (0.50 KG)3-7 days
$25.00-$65.00 (0.50 KG) 3-7 days
$20.00-$45.00 (0.50 KG)3-7 days
PAYMENT
Terms of payment
Hand Fee
Payment Site
charge US$30.00 banking fee.--
charge 4.0% service fee.https://www.paypal.com/
charge 3.5% service fee.--
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Minimum order quantity starts from 1pcs.
Lowest international shipping fee starts from US$2.00.
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