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MT3S111P(TE12L,F),RF Transistors (BJT),RF SIGE HETEROJUNCTION BIPOLAR N
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MT3S111P(TE12L,F)
RF SIGE HETEROJUNCTION BIPOLAR N
Availability
Product Details
SN Part Number: MT3S111P(TE12L,F)
Model Part Number: MT3S111P(TE12L,F)
Product Category: RF Transistors (BJT)
Toshiba Semiconductor and Storage
Standard
7000 In Stock
Additional Stock Lead Time: 24 Wks
Quantity
Tech Specifications
Description
Product Attribute
PackagingTape & Reel (TR)
Series-
Part StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)6V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1.25dB @ 1GHz
Gain10.5dB
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30mA, 5V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-243AA
Supplier Device PackagePW-MINI
Other Information
Packing
Minimum packaging
Minimum order quantity
1000
Documents
Datasheet
SHIPPING & PAYMENT
PACKING
GUARANTEES
SHIPPINGPROCESSING TIME:SHIPPING FEE DEPEND ON DIFFERENT ZONE AND COUNTRY.
Shipping Type
Shipping Fee
LeadTime
$20.00-$40.00 (0.50 KG)3-7 days
$25.00-$45.00 (0.50 KG)3-7 days
$25.00-$65.00 (0.50 KG) 3-7 days
$20.00-$45.00 (0.50 KG)3-7 days
PAYMENT
Terms of payment
Hand Fee
Payment Site
charge US$30.00 banking fee.--
charge 4.0% service fee.https://www.paypal.com/
charge 3.5% service fee.--
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