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EPC8010
TRANS GAN 100V 2.7A BUMPED DIE
Availability
Product Details
Standard
10000 In Stock
Additional Stock Lead Time: 24 Wks
Quantity
Tech Specifications
Hot-sale Product
Description | Product Attribute |
---|---|
Packaging | Tape & Reel (TR) |
Series | eGaN® |
Part Status | Active |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 500mA, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.48nC @ 5V |
Vgs (Max) | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 55pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Shipping Type | Shipping Fee | LeadTime |
---|---|---|
$20.00-$40.00 (0.50 KG) | 3-7 days | |
$25.00-$45.00 (0.50 KG) | 3-7 days | |
$25.00-$65.00 (0.50 KG) | 3-7 days | |
$20.00-$45.00 (0.50 KG) | 3-7 days |
Terms of payment | Hand Fee | Payment Site |
---|---|---|
charge US$30.00 banking fee. | -- | |
charge 4.0% service fee. | https://www.paypal.com/ | |
charge 3.5% service fee. | -- |